New Magnetoresistance Effect Leads To Four-state Memory Device

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New Magnetoresistance Effect Leads To Four-state Memory Device

Abstract Essence

[the] [of] [to] [a] [in] [states] [and] [that] [magnetic] [2017] [for] [be] [four] [5] [by] [with] [on] [bit] [bits] [memory] [is] [it] [or] [Jun] [magnetoresistance] [2] [two] [as] [you] [effect] [device] [new] [s] [have] [I] [Physics] [t] [can] [The] [4] [quaternary] [which] [are] [this] [binary] [state] [resistance] [devices] [spin] [2018] [may] [from] [materials] [05] [at] [computers] [more] [1] [power] [off] [06] [et] [al] [but] [researchers] [not] [could] [each] [ago] [so] [transistors] [org] [layer] [field] [their] [Hall] [an] [these] [we] [hours] [magnetoresistive] [December] [they] [0] [circuits] [Phys] [system] [levels] [different] [In] [magnetization] [electric] [yet] [demonstrated] [used] [store] [information] [Applied] [access] [effects]